Technologies Archives | Page 303 of 351

Developments with metallic thermal interface materials

May 1, 2007 David L. Saums

Electronics industry needs for improved performance of thermal interface materials (TIMs) are driving continued reductions in thermal resistance. These reductions are being achieved with materials that become liquidous or near-liquidous at predictable operating temperatures, with extremely high thermal conductivity filler materials, or with both. Metallic alloys with low … [Read more...]

Using a simple air recirculation model to explore computer rack cooling

February 1, 2007 Robert E. Simons

Figure 1. Schematic diagram of simple computer rack air recirculation model. Figure 2. Schematic diagram of computer rack air recirculation model with heat exchanger in rear of computer rack. In an article in the November 2006 issue of ElectronicsCooling it was noted that “advances in computer clusters have resulted in the introduction of higher density server … [Read more...]

Piezo actuators for electronics cooling

February 1, 2007 Ioan Sauciuc

Introduction Today, there is a specific demand by the electronics consumer market: more devices using low power processors with multiple simultaneous CPU functions. Due to the significant demand in computing needs, the International Technology Roadmap for Semiconductors (ITRS) 2005 predicts an increase in the overall power consumption for some platforms [1]. The cooling issues … [Read more...]

Adhesion of Thermal Interface Materials for CPU Heatsinks, an Overlooked Issue

February 1, 2007 Margaret B. Stern

High performance thermal interface materials (TIMs) inserted between the CPU lid and heatsink - generally referred to as the "TIM2" - provide a reworkable low resistance thermal path in the package stack-up. It is well-recognized that users need to monitor the thermal performance of the TIMs to verify vendor data [1, 2]. Less well-known is that the TIM2 can also mechanically … [Read more...]

Microscale heat transfer

February 1, 2007 Mehdi Asheghi, Ph. D.

Advances in microfabrication processes have led to a continuous miniaturization of Field Effect Transistors (FET) that contain semiconductor (e.g., silicon), insulator (e.g., silicon dioxide), and metallic (e.g., copper interconnects) layers only a few nanometers thick. Ever increasing demand for faster microprocessors and the continuous trend to pack more transistors on a … [Read more...]

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